Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN.
نویسندگان
چکیده
Crystal morphologies are important for the design and functionality of devices based on low-dimensional nanomaterials. The equilibrium crystal shape (ECS) is a key quantity in this context. It is determined by surface energies, which are hard to access experimentally but can generally be well predicted by first-principles methods. Unfortunately, this is not necessarily so for polar and semipolar surfaces of wurtzite crystals. By extending the concept of Wulff construction, we demonstrate that ECSs can nevertheless be obtained for this class of materials. For the example of GaN, we identify different crystal shapes depending on the chemical potential, shedding light on experimentally observed GaN nanostructures.
منابع مشابه
Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals
For the limitation of experimental methods in crystal characterization, in this study, the mechanical, thermodynamic and electronic properties of wurtzite and zinc-blende GaN crystals were investigated by first-principles calculations based on density functional theory. Firstly, bulk moduli, shear moduli, elastic moduli and Poisson's ratios of the two GaN polycrystals were calculated using Voig...
متن کاملFirst-Principles Investigation of Density of States and Electron Density in Wurtzite In0.5Ga0.5 N Alloys with GGA-PBEsol Method
In present work, we have calculated the electronic properties including density of states and electron density for GaN, InN and InxGa1-xN in wurtzite phase for x=0.5. The study is based on density functional theory with full potential linearized augmented plane wave method by generalized gradient approximation for calculating electronic properties. In this report we concluded that InxGa1-xN ba...
متن کاملSecond order Raman spectroscopy of the wurtzite form of GaN
We report on Raman scattering by phonon pairs in GaN films grown on sapphire substrates by plasma-enhanced molecular beam epitaxy. The first order data are consistent with results obtained from GaN bulk crystals of the wurtzite structure. The Al and the much weaker E2 symmetry components of the second order scattering have been identified. Two-phonon spectra are dominated by contributions due t...
متن کاملوابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی
Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...
متن کاملMicroanalysis of wurtzite - GaN single crystals prepared by d . c . arc discharge
Gallium nitride crystals with definite faces have been fabricated by d.c. arc discharge using gallium and Hz + NH, as starting materials. Transmission electron microscope, selected area diffraction and X-ray diffraction investigation of the as-grown GaN Srystals show thtt the well faceted crystals are single crystalline GaN having a wnrtzite structure with lattice constants a, = 3.18 A and cu =...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Physical review letters
دوره 115 8 شماره
صفحات -
تاریخ انتشار 2015